Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
QS6M4TR
Manufacturer
ROHMManufacturer Product Number
QS6M4TR
Description
MOSFET N+P 30 20V 1.5A TSMT6
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Power | 1.25 W |
| Drain-Source Saturation Current | 1.5A |
| Drain-Source On-Resistance | 0.245Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.5180 | |
| 100+ | $ 0.4011 | |
| 1000+ | $ 0.3217 | |
| 6000+ | $ 0.2521 | |
| 15000+ | $ 0.2200 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllQS6U22TR
MOSFET P-CH 20V 1.5A
ROHM
QS6U24TR
栅极电压Vgs：±20V Pd-功率耗散(Max)：1.25W(Ta) Rds On(Max)@Id,Vgs：400mΩ@1A,10V 工作温度：150°C(TJ) 封装/外壳：SOT-23-6,TSOT-23-6
ROHM
QS6U24TR
栅极电压Vgs：±20V Pd-功率耗散(Max)：1.25W(Ta) Rds On(Max)@Id,Vgs：400mΩ@1A,10V 工作温度：150°C(TJ) 封装/外壳：SOT-23-6,TSOT-23-6
ROHM
QS8J13TR
场效应管(MOSFET) 1.25W 12V 5.5A 2个P沟道 TSMT8
ROHM
