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RU1C001UNTCL
Manufacturer
ROHMManufacturer Product Number
RU1C001UNTCL
Description
连续漏极电流Id：100mA Pd-功率耗散(Max)：150mW Rds On(Max)@Id,Vgs：2.5Ω 漏源极电压Vds：20V 栅极电压Vgs：300mV
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 0.15W |
| Drain-Source Saturation Current | 0.1A |
| Drain-Source On-Resistance | 4.2Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 860
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 20+ | $ 0.0279 | |
| 200+ | $ 0.0209 | |
| 600+ | $ 0.0181 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRU1C001ZPTL
MOSFET 1.2V Drive Pch MOSFET
ROHM
RU1C001ZPTL
FET类型：P-Channel 漏源极电压Vds：20V 连续漏极电流Id：100mA(Ta) 栅极电压Vgs：±10V Pd-功率耗散(Max)：150mW(Ta)
ROHM
RU1C001ZPTL
原装正品，假一罚十
ROHM
RU1C002UNTCL
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ROHM
