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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TT8J3TR

Manufacturer

ROHM

Manufacturer Product Number

TT8J3TR

Description

--

Manufacturer Standard Lead Time

3-5

Detailed Description

--

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Gate-Source Breakdown Voltage	30V
Drain-Source Saturation Current	2.5A
Drain-Source On-Resistance	0.084Ω

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 100

Quantity	Unit Price	Ext Price
1+	$ 0.6740
10+	$ 0.5514
25+	$ 0.4400
100+	$ 0.3300
250+	$ 0.3091
500+	$ 0.2883
1000+	$ 0.2493
3000+	$ 0.2103

Price For：Each

Minimum:1/Multiple:1

Total amount:

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TT8M

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NEWAIR

TT8M1TR

原装正品，工厂库存

ROHM

TT8M1TR

Rds On(Max)@Id,Vgs：72mΩ@2.5A,4.5V Pd-功率耗散(Max)：1W 工作温度：150°C(TJ) 封装/外壳：TSST FET类型：N+P-Channel

ROHM

TT8M1TR

MOSFET 1.5V Drive Nch+Pch MOSFET

ROHM