Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
RN2102MFV,L3F(CT
Manufacturer
ToshibaManufacturer Product Number
RN2102MFV,L3F(CT
Description
TRANS PREBIAS PNP 50V 0.1A VESM
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 150 mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Current（ic） | 100mA |
| Jing Ti Guan Type | 1 PNP - Pre-biased |
| DC Gain (hFE@Ic, Vce) | 50@10mA, 5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 8,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 8000+ | $ 0.0279 | |
| 16000+ | $ 0.0251 | |
| 24000+ | $ 0.0237 | |
| 40000+ | $ 0.0223 | |
| 56000+ | $ 0.0209 | |
| 80000+ | $ 0.0195 | |
| 200000+ | $ 0.0181 | |
| 400000+ | $ 0.0167 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRN2103,LF(CT
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SSM
Toshiba
RN2105MFV,L3F(CT
--
Toshiba
RN2106,LF(CT
雙極結晶體管 - 預偏置 PNP BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package
Toshiba
RN2106MFV,L3F(CT
--
Toshiba