Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TTC5200(Q)
Manufacturer
ToshibaManufacturer Product Number
TTC5200(Q)
Description
雙極性晶體管- BJT NPN PWR Amp Trans 15A 150W 230V
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Te Zheng Frequency | 30MHz |
| Ji Dian Ji Current（ic） | 15A |
| Jing Ti Guan Type | NPN |
| Power | 150W |
| Operating Temperature | 150℃ |
| Ji Dian Ji Jie Zhi Current（icbo） | 5µA |
| Ji She Ji Ji Chuan Voltage（vceo） | 230V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 3V@800mA, 8A |
| DC Gain (hFE@Ic, Vce) | 80@1A, 5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 699
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.1359 | |
| 10+ | $ 2.7043 | |
| 100+ | $ 2.4592 | |
| 500+ | $ 2.2128 | |
| 1000+ | $ 1.9663 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllTTCM4-4X+
--
Mini-Circuits
TTD1409B,S4X
雙極結晶體管 - BJT Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=25W F=1MHZ
Toshiba
TTD1415B,S4X(S
--
Toshiba
TTD18P10AT
Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，Trench MOS拥行更低的导通屯阻和栅漏电荷密度，因而拥行更低的导通和开义损耗及更快的开义速度。 同时由于Trench MOS的沟逍是垂直的， 故可进一步提高具沟逍密度， 减小芯片尺寸， 降低导通电阻。 ）并且具有MOS器件的一切优点， 如： 开关速度快、 驱动功率小等。并联的元胞具有负的温度系数，有利于大电流和更宽的安全工作区的实现。
UNIS
