Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
2N7002E-T1-E3
Manufacturer
VISHAYManufacturer Product Number
2N7002E-T1-E3
Description
注意：本网站自有库存产品每个型号150元人民币起订，且订单总额不得低于300元人民币
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,178
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 100+ | $ 0.0279 | |
| 300+ | $ 0.0279 | |
| 500+ | $ 0.0209 | |
| 1000+ | $ 0.0195 | |
| 4000+ | $ 0.0195 | |
| 5000+ | $ 0.0181 | |
| 10000+ | $ 0.0181 | |
| 1000000+ | $ 0.0181 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
2N7002E-T1-E3-ES
场效应管(MOSFET) 200mW 60V 300mA 1个N沟道 SOT-23
静芯微
2N7002E-T1-E3-ES
--
静芯微
2N7002E-T1-E3-HXY
--
华轩阳
2N7002E-T1-E3-MS
类型：N沟道漏源电压(Vdss)：60V连续漏极电流(Id)：300mA功率(Pd)：350mW导通电阻(RDS(on)@Vgs,Id)：2.2Ω@10V,300mA阈值电压(Vgs(th)@Id)：1.6V@250uA栅极电荷(Qg@Vgs)：3.7nC@10V输入电容(Ciss@Vds)：25.5pF@30V反向传输电容(Crss@Vds)
MSKSEMI
