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SI1902CDL-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI1902CDL-T1-GE3
Description
场效应管(MOSFET) 420mW 20V 1.1A 2个N沟道 SC-70-6
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 1.1A |
| Power | 0.42W |
| Drain-Source On-Resistance | 0.235Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,800
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1170 | |
| 50+ | $ 0.0905 | |
| 150+ | $ 0.0780 | |
| 500+ | $ 0.0682 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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SI1902DL-T1-GE3
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SI1922EDH-T1-GE3
MOSFET 20V 1.3A 1.25W
VISHAY
SI1922EDH-T1-GE3
场效应管(MOSFET) 1.25W 20V 1.3A 2个N沟道 SC-70-6(SOT-363)
VISHAY
