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SI2301CDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2301CDS-T1-GE3
Description
P-CHANNEL-FET 2,7A 20V SOT23 RoHSconf
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Input Capacitance | 55 pF |
| Power | 1.6W |
| Drain-Source Saturation Current | 3.1A |
| Drain-Source On-Resistance | 0.112Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 96,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 3000+ | $ 0.2771 | |
| 6000+ | $ 0.2534 | |
| 9000+ | $ 0.2423 | |
| 15000+ | $ 0.2284 | |
| 21000+ | $ 0.2200 | |
| 30000+ | $ 0.2117 | |
| 75000+ | $ 0.2075 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2301CDS-T1-GE3-ES
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EIECSUPER
SI2301CDS-T1-GE3-ES
场效应管(MOSFET) 1W 20V 3A 1个P沟道 SOT-23
EIECSUPER
SI2301CDS-T1-GE3-HXY
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HUAXUANYANG
SI2301CDS-T1-GE3-MS
类型：P沟道漏源电压(Vdss)：-20V连续漏极电流(Id)：-3A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：70mΩ@4.5V,3A阈值电压Vgs(th)@Id)：-0.3V至-1.1V@250uA
MSKSEMI
