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SI2302DDS-T1-BE3
Manufacturer
VISHAYManufacturer Product Number
SI2302DDS-T1-BE3
Description
N-CHANNEL 20-V (D-S) MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 2.6A |
| Gate Charge | 5.5 nC @ 4.5 V |
| Power | 710mW |
| Threshold Voltage | 850mV @ 250μA |
| On-Resistance | 57mΩ@3.6A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,701
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6698 | |
| 10+ | $ 0.4164 | |
| 100+ | $ 0.2660 | |
| 500+ | $ 0.2005 | |
| 1000+ | $ 0.1796 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2302DDS-T1-GE3
场效应管(MOSFET) 710mW 20V 2.9A 1个N沟道 SOT-23
VISHAY
Si2302DDS-T1-GE3-HXY
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HUAXUANYANG
SI2302DS
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TECH PUBLIC
Si2302DS-HXY
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HUAXUANYANG
