Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI3424CDV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3424CDV-T1-GE3
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 8A |
| Gate Charge | 12.5nC@10V |
| Power | 3.6 W |
| On-Resistance | 26mΩ@7.2A, 10V |
| Input Capacitance | 405pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 880
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3175 | |
| 50+ | $ 0.2465 | |
| 150+ | $ 0.2158 | |
| 500+ | $ 0.1769 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI3429EDV-T1-GE3
20V, 8A, 21MOHM, P-CH, TSOP-6
VISHAY
SI3429EDV-T1-GE3
20V, 8A, 21MOHM, P-CH, TSOP-6
VISHAY
SI3430DV-T1-E3
MOSFET 100V 8A 2W
VISHAY
SI3430DV-T1-GE3
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
VISHAY
