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SI3457CDV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3457CDV-T1-GE3
Description
场效应管(MOSFET) 3W 30V 5.1A 1个P沟道 TSOP-6-1.5mm
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Power | 3W |
| Drain-Source Saturation Current | 5.1A |
| Input Capacitance | 63pF |
| Drain-Source On-Resistance | 0.074Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 24,685
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1086 | |
| 200+ | $ 0.0752 | |
| 1500+ | $ 0.0668 | |
| 3000+ | $ 0.0627 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI3457CDV-T1-GE3-VB
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SI3457DV-T1-E3-VB
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SI3458BDV
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TECH PUBLIC
SI3458BDV-T1-GE3
MOSFET N-CH 60V 4.1A 6-TSOP
VISHAY
