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SI3459BDV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3459BDV-T1-GE3
Description
MOSFET P-CH 60V 2.9A 6-TSOP
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Input Capacitance | 30pF |
| Power | 3.3W |
| Drain-Source Saturation Current | 0.0022 A |
| Drain-Source On-Resistance | 0.216 Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 248
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9455 | |
| 10+ | $ 0.6670 | |
| 50+ | $ 0.5264 | |
| 100+ | $ 0.4790 | |
| 500+ | $ 0.3941 | |
| 1000+ | $ 0.3523 | |
| 3000+ | $ 0.2743 | |
| 6000+ | $ 0.2562 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI3460BDV-T1-BE3
N-CHANNEL 20-V (D-S) MOSFET
VISHAY
SI3460DDV-T1-GE3
N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
VISHAY
SI3460DDV-T1-GE3
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VISHAY
SI3460DV
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TECH PUBLIC
