Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI3552DV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3552DV-T1-GE3
Description
MOSFET-阵列-N-和-P-沟道-30V-2.5A-1.15W-表面贴装型-6-TSOP
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel and P-channel |
| Threshold Voltage | 1V@250µA |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 2.5A |
| Power | 1.15W |
| On-Resistance | 105mΩ @ 2.5A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,776
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4192 | |
| 100+ | $ 0.3314 | |
| 750+ | $ 0.2952 | |
| 1500+ | $ 0.2771 | |
| 3000+ | $ 0.2604 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI3585CDV
--
TECH PUBLIC
SI3585CDV-T1-GE3
MOSFET-阵列-N-和-P-沟道-20V-3.9A-2.1A-1.4W-1.3W-表面贴装型-6-TSOP
VISHAY
SI3585CDV-T1-GE3
Dual N / P-Channel 20 V 0.058/0.195 O 4.8 nC Surface Mount Power Mosfet - TSOP-
VISHAY
SI3585DV-T1-E3-VB
--
Vbsemi
