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SI3585CDV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3585CDV-T1-GE3
Description
MOSFET-阵列-N-和-P-沟道-20V-3.9A-2.1A-1.4W-1.3W-表面贴装型-6-TSOP
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel and P-channel |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1.5V@250µA |
| Continuous Drain Current | 3.9A,2.1A |
| Power | 1.4W,1.3W |
| Input Capacitance | 150pF@10V |
| On-Resistance | 58mΩ@2.5A，4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,385
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2200 | |
| 100+ | $ 0.1643 | |
| 750+ | $ 0.1351 | |
| 1500+ | $ 0.1198 | |
| 3000+ | $ 0.1184 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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MOSFET-阵列-N-和-P-沟道-30V-2.5A-1.7A-830mW-表面贴装型-6-TSOP
VISHAY
