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SI7117DN-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7117DN-T1-GE3
Description
Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.17A; 12.5W
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4.5V@250μA |
| Type | P-Channel |
| Drain-Source Voltage | 150V |
| Gate Charge | 12nC@10V |
| Input Capacitance | 510pF@25V |
| Continuous Drain Current | 1.1A |
| Power | 3.2W, 12.5W |
| On-Resistance | 1.2Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,942
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5793 | |
| 10+ | $ 0.5152 | |
| 30+ | $ 0.4846 | |
| 100+ | $ 0.4540 | |
| 500+ | $ 0.4359 | |
| 1000+ | $ 0.4261 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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