Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI7123DN-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7123DN-T1-GE3
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Power | 1.5W |
| Continuous Drain Current | 10.2A |
| Gate Charge | 90nC@4.5V |
| On-Resistance | 10.6mΩ@15A, 4.5V |
| Input Capacitance | 3729pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6181 | |
| 10+ | $ 1.5875 | |
| 30+ | $ 1.5666 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI7129DN-T1-GE3
--
VISHAY
SI7129DN-T1-GE3
场效应管(MOSFET) 3.8W；52.1W 30V 35A 1个P沟道 PowerPAK1212-8
VISHAY
SI7135DP-T1-GE3
MOSFET P-CH 30V 60A PPAK SO-8
VISHAY
SI7135DP-T1-GE3
场效应管(MOSFET) 6.25W；104W 30V 60A 1个P沟道 PowerPAK-SO-8
VISHAY
