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SI7450DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7450DP-T1-GE3
Description
场效应管(MOSFET) 1.9W 200V 3.2A 1个N沟道 SO-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source On-Resistance | 0.09Ω |
| Gate-Source Breakdown Voltage | 200V |
| Drain-Source Saturation Current | 3.2 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,263
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0542 | |
| 100+ | $ 0.9093 | |
| 750+ | $ 0.8188 | |
| 1500+ | $ 0.7812 | |
| 3000+ | $ 0.7478 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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VISHAY
