Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI7454FDP-T1-RE3
Manufacturer
VISHAYManufacturer Product Number
SI7454FDP-T1-RE3
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Threshold Voltage | 2.4V @ 250µA |
| Power | 3.6W, 39W |
| Gate Charge | 26.5nC@10V |
| Input Capacitance | 1110pF@50V |
| Continuous Drain Current | 7.2A,23.5A |
| On-Resistance | 29.5mΩ@10A，10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,934
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.2310 | |
| 50+ | $ 0.9915 | |
| 100+ | $ 0.7520 | |
| 500+ | $ 0.5654 | |
| 1500+ | $ 0.5556 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI7456CDP-T1-GE3
MOSFET 100V 27.5A 35.7W
VISHAY
SI7456DDP-T1-GE3
场效应管(MOSFET) 5W；35.7W 100V 27.8A 1个N沟道 PowerPAK-SO-8
VISHAY
SI7456DDP-T1-GE3
MOSFET 100volt 23mOhms@10V 27.8A N-Ch T-FET
VISHAY
SI7456DP-T1-E3
场效应管(MOSFET) 1.9W 100V 5.7A 1个N沟道 PowerPAK-SO-8
VISHAY
