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SI8806DB-T2-E1
Manufacturer
VISHAYManufacturer Product Number
SI8806DB-T2-E1
Description
MOSFET 12V 3.9A 0.9W 4.3mOhms @ 4.5V
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 1V@250µA |
| Power | 500mW |
| Drain-Source Voltage | 12V |
| Continuous Drain Current | 2.8A |
| Gate Charge | 17nC@8V |
| On-Resistance | 43mΩ@1A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 7,855
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.3772 | |
| 10+ | $ 0.8536 | |
| 100+ | $ 0.5514 | |
| 500+ | $ 0.4205 | |
| 1000+ | $ 0.3788 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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