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SIA921EDJ-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIA921EDJ-T1-GE3
Description
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Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | 2 P-channel (Dual) |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1.4V @ 250µA |
| Continuous Drain Current | 4.5A |
| Power | 7.8 W |
| On-Resistance | 59 mΩ @ 3.6A, 4.5 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 29
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4219 | |
| 10+ | $ 0.4136 | |
| 30+ | $ 0.4080 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSIA923AEDJ-T1-GE3
MOSFET -20V .054ohm@-4.5V -4.5A P-CH
VISHAY
SIA923AEDJ-T1-GE3
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VISHAY
SIA923EDJ-T1-GE3
MOSFET 20V 4.5A 7.8W
VISHAY
SIA923EDJ-T1-GE3
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W
VISHAY
