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SIR584DP-T1-RE3
Manufacturer
VISHAYManufacturer Product Number
SIR584DP-T1-RE3
Description
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Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Threshold Voltage | 4V |
| Drain-Source Voltage | 80 V |
| Continuous Drain Current | 100A |
| Type | MOSFET |
| On-Resistance | 3.5mΩ |
| Power | 83.3W |
| Gate Charge | 36.7nC |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,673
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.8632 | |
| 50+ | $ 1.5680 | |
| 100+ | $ 1.2728 | |
| 500+ | $ 0.9288 | |
| 1500+ | $ 0.9107 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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SIR606BDP-T1-RE3
表面贴装 N 沟道 100V 10.9A（Ta），38.7A（Tc） 5W（Ta），62.5W（Tc） PowerPAK® SO-8
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SIR606BDP-T1-RE3
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 38.7A; Idm: 80A
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