Manufacturer
VISHAYManufacturer Product Number
SQ2315ES-T1_GE3
Description
FET类型:P-Channel 漏源极电压Vds:12V 连续漏极电流Id:5A(Tc) 栅极电压Vgs:±8V Pd-功率耗散(Max):2W(Tc)
Manufacturer Standard Lead Time
2-3
Detailed Description
FET类型:P-Channel 漏源极电压Vds:12V 连续漏极电流Id:5A(Tc) 栅极电压Vgs:±8V Pd-功率耗散(Max):2W(Tc)
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Continuous Drain Current | 5A |
| Power | 2W |
| Drain-Source Voltage | 12V |
| Type | P-Channel |
| On-Resistance | 50mΩ@3.5A,10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1963 |
Minimum:1/Multiple:1
Total amount:
SQ2318AES-T1_GE3
栅极电压Vgs:±20V Pd-功率耗散(Max):3W(Tc) Rds On(Max)@Id,Vgs:31mΩ@6A,10V 工作温度:-55°C~175°C(TJ) 封装/外壳:SOT-23
VISHAY