Manufacturer
VISHAYManufacturer Product Number
SQ2315ES-T1_GE3
Description
Vishay SQ Rugged 系列 Si P沟道 MOSFET SQ2315ES-T1_GE3, 3 A, Vds=12 V, 3引脚 SOT-23封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Vishay SQ Rugged 系列 Si P沟道 MOSFET SQ2315ES-T1_GE3, 3 A, Vds=12 V, 3引脚 SOT-23封装
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Continuous Drain Current | 5A |
| Power | 2W |
| Drain-Source Voltage | 12V |
| Type | P-Channel |
| On-Resistance | 50mΩ@3.5A,10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7186 | |
| 5+ | $ 0.4971 | |
| 10+ | $ 0.4178 | |
| 50+ | $ 0.2841 | |
| 100+ | $ 0.2674 |
Minimum:1/Multiple:1
Total amount:
SQ2318AES-T1_GE3
栅极电压Vgs:±20V Pd-功率耗散(Max):3W(Tc) Rds On(Max)@Id,Vgs:31mΩ@6A,10V 工作温度:-55°C~175°C(TJ) 封装/外壳:SOT-23
VISHAY