Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SiA517DJ-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SiA517DJ-T1-GE3
Description
MOSFET 12V 4.5A 6.5W 29/61mohm @ 4.5V
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel and P-channel |
| Threshold Voltage | 1V@250µA |
| Drain-Source Voltage | 12V |
| Continuous Drain Current | 4.5A |
| Input Capacitance | 500pF @ 6V |
| On-Resistance | 29mΩ @ 5A, 4.5V |
| Power | 6.5W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SIA519EDJ-T1-GE3
--
JSMSEMI
SIA519EDJ-T1-GE3
场效应管(MOSFET) 7.8W 20V 4.5A 1个N沟道+1个P沟道 PowerPAK-SC-70-6
VISHAY
SIA519EDJ-T1-GE3
MOSFET 20V 4.5A/4.5A N&P-CH MOSFET
VISHAY
SIA527DJ-T1-GE3
MOSFET 12V 29mOhm@4.5V 4.5A N-CH
VISHAY
