Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NDT3055-VB
Manufacturer
VbsemiManufacturer Product Number
NDT3055-VB
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Power | 4W |
| Continuous Drain Current | 4.5A |
| Gate Charge | 10 nC @ 4.5 V |
| Reverse Transfer Capacitance | 100pF @ 30V |
| On-Resistance | 76mΩ@10V, 4A |
| Input Capacitance | 810pF@30V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,355
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1950 | |
| 50+ | $ 0.1713 | |
| 150+ | $ 0.1601 | |
| 500+ | $ 0.1476 | |
| 2500+ | $ 0.1323 | |
| 5000+ | $ 0.1281 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllNDT3055L
Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R
Onsemi
NDT3055L
--
Onsemi
NDT3055L
N-Channel 60 V 0.1O SMT Enhancement Mode Field Effect Transistor SOT-223
Onsemi
NDT3055L
N 沟道逻辑电平增强型场效应晶体管，60V，4A，100mΩ
Onsemi
