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HYG090ND06LS1C2
Manufacturer
HUAYI MICROELECTRONICSManufacturer Product Number
HYG090ND06LS1C2
Description
场效应管(MOSFET) 60W 60V 56A 2个N沟道 PDFN-8(5.2x5.9)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Operating Temperature | -55℃ ~ +175℃ |
| Type | 2 N-channel |
| Power | 60W |
| Threshold Voltage | 1.9V @ 250μA |
| On-Resistance | 8mΩ@10V, 20A |
| Gate Charge | 18.5nC@10V |
| Continuous Drain Current | 56A |
| Reverse Transfer Capacitance | 39pF@25V |
| Input Capacitance | 926pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 22,790
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3788 | |
| 50+ | $ 0.3050 | |
| 150+ | $ 0.2702 | |
| 500+ | $ 0.1782 | |
| 2500+ | $ 0.1713 | |
| 5000+ | $ 0.1657 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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