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SI7117DN-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI7117DN-T1-E3
Description
场效应管(MOSFET) 3.2W；12.5W 150V 2.17A 1个P沟道 PowerPAK1212-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | P-Channel |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 2.17A |
| Power | 3.2W, 12.5W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 559
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3398 | |
| 10+ | $ 0.2952 | |
| 30+ | $ 0.2715 | |
| 100+ | $ 0.2507 | |
| 500+ | $ 0.2381 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI7117DN-T1-GE3
Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.17A; 12.5W
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SI7117DN-T1-GE3
MOSFET P-CH 150V 2.17A 1212-8
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SI7119DN-T1-E3
场效应管(MOSFET) 3.7W；52W 200V 3.8A 1个P沟道 PowerPAK1212-8
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SI7119DN-T1-GE3
场效应管(MOSFET) 3.7W；52W 200V 3.8A 1个P沟道 PowerPAK1212-8
VISHAY
