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SQ2309ES-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQ2309ES-T1_GE3
Description
场效应管(MOSFET) 2W 60V 1.7A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Power | 2W |
| Type | P-Channel |
| Drain-Source Voltage | -60V |
| Continuous Drain Current | -1.7 A |
| On-Resistance | 335 mΩ @ -1.25 A, -10 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 670
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2172 | |
| 100+ | $ 0.1657 | |
| 750+ | $ 0.1365 | |
| 1500+ | $ 0.1239 | |
| 3000+ | $ 0.1142 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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HUAXUANYANG
SQ2315ES-T1_GE3
FET类型：P-Channel 漏源极电压Vds：12V 连续漏极电流Id：5A(Tc) 栅极电压Vgs：±8V Pd-功率耗散(Max)：2W(Tc)
VISHAY
SQ2315ES-T1_GE3
Vishay SQ Rugged 系列 Si P沟道 MOSFET SQ2315ES-T1_GE3, 3 A, Vds=12 V, 3引脚 SOT-23封装
VISHAY
